报告题目：FunctionalFerroelectric Tunnel Junctions with Ultra-thin BaTiO3Layers

报告地点：实验楼四层报告厅

报告时间：7月15日15:30

报告人简介：

   陈景升，教授，新加坡国立大学材料科学工程系。1999年至2001年在新加坡南洋理工大学电子电器工程学院做博士后工作；2001年至2007年任新加坡国家数据存储研究院主任工程师，四级科学家；2007年至今，在新加坡国立大学材料科学工程系工作。陈教授主要从事纳米磁性材料的信息存储材料与器件、电子强关联氧化物多铁性材料、自旋电子学、纳米团簇的光学和磁学性质等领域的研究。自2008年,已获得由世界上最大的硬盘公司美国希捷技术超过100万美元的赞助，开发的多项技术应用在希捷产品上，并获得了新加坡科学技术部、教育部和国家研究基金会超过1200万新加坡元的资助。陈教授目前正在领导一项900万新加坡元的项目，开发低功耗信息存储器。陈教授是新加坡SG-SPIN联盟管理委员会成员。目前已发表SCI收录论文200多篇，出版3本科技书籍，申请国际发明专利10项，多次在国际会议上做邀请报告，H指数为24。2004年获得陈嘉庚青年发明奖；2005年获得国家数据存储研究院杰出奖。 

报告摘要：

      With the advance of the information technology data has become a new asset class- the new oil of the internet. The media of storing the data becomes more and more important. In the information storage devices, the data are stored in term of the electron spin and electron charge. In the present talk, I will discuss there searches in my group on the nanostructured materials used for the ultra-highdensity magnetic recording media, magnetic random access memory and electricfield controlled energy efficient resistance memory. For the application of high density magnetic recording media and magnetic random access memory, our research focused on the development of high anisotropy magnetic materials – L 10FePtwith magnetic anisotropy is as high as 7×107erg/cm3,which allows the storage density to be as high as 50 T bits/in2.Through the material and structure design, nanostructured FePt films have been developed to meet all the requirements of the industry. For example, forapplication of FePt for next generation magnetic recording media- heatingassisted magnetic media, FePt films with uniform small grain size (5 nm), (001)texture, and high anisotropy are developed. For the MRAM application,ultra-thin FePt film (1 nm) with (001) texture and high anisotropy wereobtained. For energy efficient memory, voltage (electric field) rather currentused in CMOS and hard disk drives are used to writing the data.In this part, Iwill discuss a new emerging information storage technology based on ferroelectric tunnel junction which combines electric field writing and resistance reading. The ferroelectric tunnel junction was successfully developed on silicon substrate and writing speed, endurance and fatigue will bediscussed