薛武红

薛武红,教授,博士生导师,国家级青年人才,材料科学研究院副院长。主要从事二维(2D)铁性材料与器件研究。在Nat. Commun. (5篇), Adv. Mater. (2篇), Adv. Func. Mater. (5篇), Nano Lett. (3篇)等国际知名期刊发表SCI论文50余篇,SCI他引2786次,H因子为29。授权中国发明专利5项,主持国家自然科学基金青年科学基金项目(B类)(原优秀青年科学基金项目)、国家自然科学基金青年/面上项目、国家重点专项子课题和国家重点研发计划青年科学家项目子课题等多项国家级科研项目,获批山西省优秀青年基金和青年学术带头人项目,并获太原市最美科技工作者、2025年度《稀有金属》优秀青年编委等荣誉称号;先后在国内外重要学术会议作邀请报告20余次;长期担任Nat. Commun.、Adv. Mater.等期刊审稿人。兼任《稀有金属》青年编委、山西省材料研究学会常务理事。
研究方向:
1.高居里温度二维铁性材料研制
2.二维反铁磁外场与界面调控及机理研究
3.二维铁性存储、逻辑和神经形态器件与类脑芯片演示应用
代表性论文:
1.Wuhong Xue‡,*(共同第一作者, 共同通讯作者), Tao Wang‡, Huali Yang‡, Huanhuan Zhang, Guohong Dai, Sheng Zhang, Ruilong Yang, Zhiyong Quan, Run-Wei Li, Jin Tang*, Cheng Song*, Xiaohong Xu*, Stable antivortices in multiferroic ε-Fe2O3 with the coalescence of misaligned grains, Nat. Commun. 16, 440 (2025). 影响因子15, SCI一区
2.Wuhong Xue‡(共同第一作者), Peng Wang‡, Wenjuan Ci‡, Ying Guo, Jingyuan Qu, Zeting Zeng, Tianqi Liu, Ri He*, Shaobo Cheng*, Xiaohong Xu*, Stable antivortices in multiferroic ε-Fe2O3 with the coalescence of misaligned grains, Nat. Commun. 16, 6313 (2025). 影响因子15, SCI一区
3.Peng Wang, Biyi Jiang, Wuhong Xue*(共同通讯作者), Jingyuan Qu, Wei Zhao, Tianqi Liu, Yan Han, Rongkai Jiao, Ruilong Yang, Feichi Zhou*, Xiaohong Xu*, Dual-ferroelectric stacked high-performance field-effect transistor, Nat. Commun. doi: https://doi.org/10.1038/s41467-026-76907-4(2026). 影响因子15, SCI一区
4.Bingjie Guo‡, Xinhui Chen‡, An Chen‡, Jinxin Wang‡, Wuhong Xue‡(共同第一作者), Tao Wang, Zhixin Wu, Xiaolong Zhong, Jianmin Zeng, Jinjin Li*, Mao Li*, Xiaohong Xu*, Yu Chen*, and Gang Liu*, Molecular HDD logic for encrypted massive data storage, Nat. Commun. 16, 2046 (2025). 影响因子15, SCI一区
5.Bin Zhang‡, Fei Fan‡, Wuhong Xue‡(共同第一作者), Gang Liu*, Yubin Fu*, Xiaodong Zhuang, Xiao-Hong Xu, Junwei Gu, Run-Wei Li, Yu Chen*, Redox Gated Polymer Memristive Processing Memory Unit, Nat. Commun. 10, 736 (2019). 影响因子15, SCI一区
6.Tao Wang, Wuhong Xue*(共同通讯作者), Huali Yang, Yongzhao Zhang, Shaobo Cheng, Zhiwei Fan, Run-Wei Li, Peng Zhou*, Xiaohong Xu*, Robust Ferrimagnetism and Ferroelectricity in 2D ɛ-Fe2O3 Semiconductor with Ultrahigh Ordering Temperature, Adv. Mater. 36, 2311041 (2024). 影响因子26, SCI一区
7.Wuhong Xue(第一作者), Gang Liu*, Zhicheng Zhong, Yuehua Dai, Jie Shang, Yiwei Liu, Huali Yang, Xiaohui Yi, Hongwei Tan, Liang Pan, Shuang Gao, Jun Ding, Xiao-Hong Xu*, Run-Wei Li*, 1D Vanadium Dioxide Nanochannel Constructed via Electric Field-Induced Ion Transport and Its Superior Metal-Insulator Transition, Adv. Mater. 29, 1702162 (2017). (封面论文) 影响因子26, SCI一区
8.Wenjuan Ci, Wuhong Xue*(共同通讯作者), Peng Wang, Wenhui Yin, Xiaoling Wang, Lei Shi, Peng Zhou*, Xiaohong Xu*, All-in-one Optoelectronic Neuristor Based on full-vdW Two-terminal Ferroelectric p-n Heterojunction, Adv. Func. Mater. 34, 2305822 (2023). 影响因子19, SCI一区
9.Wenjuan Ci, Peng Wang, Wuhong Xue*(共同通讯作者), Hongtao Yuan, Xiaohong Xu*, Engineering Ferroelectric-/Ion-Modulated Conductance in 2D vdW CuInP2S6 for Non-Volatile Digital Memory and Artificial Synapse, Adv. Func. Mater. 34,2316360 (2024). 影响因子19, SCI一区
10.Peng Wang, Wuhong Xue*(共同通讯作者), Jianmin Zeng, Wenjuan Ci, Qilai Chen, Baohua Lv, Ruilong Yang, Yang Liu, Gang Liu*, Xiaohong Xu*, Wavelength-Selective Photodetector and Neuromorphic Visual Sensor Utilizing Intrinsic Defect Semiconductor, Adv. Func. Mater. 2407746 (2024). 影响因子19, SCI一区
11.Wenjuan Ci, Peng Wang, Wuhong Xue(共同通讯作者), Tianqi Liu, Jingyuan Qu, Xiaohong Xu*, Polarization-Modulated Multi-Mode Optoelectronic Synaptic Transistor for Sensing-Memory-Logic Computing and Optical Wireless Communication, Adv. Func. Mater. 2424926 (2025). 影响因子19, SCI一区
12.Tao Wang, Zhiwei Fan, Wuhong Xue*(共同通讯作者), Huali Yang*, Run-Wei Li, Xiaohong Xu*, Controlled growth and size-dependent magnetic domain states of 2D γ-Fe2O3, Nano Lett. 23, 10498 (2023). 影响因子9, SCI一区
13.Qitao Jiang, Huali Yang, Wuhong Xue*(共同通讯作者), Ruilong Yang, Jianlei Shen, Xueying Zhang, Run-Wei Li, and Xiaohong Xu*, Controlled Growth of Submillimeter-Scale Cr5Te8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process, Nano Lett. 24, 1246 (2024). 影响因子9, SCI一区
14.Peng Wang, Jie Li, Wuhong Xue*(共同通讯作者), Wenjuan Ci, Fengxian Jiang, Lei Shi, Feichi Zhou*, Peng Zhou*, Xiaohong Xu*, Integrated In-Memory Sensor and Computing ofArtificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor, Adv. Sci. 11, 2305679 (2024). (高被引热点论文) 影响因子14, SCI一区
15.Peng Wang, Wuhong Xue*(共同通讯作者), Wenjuan Ci, Ruilong Yang and Xiaohong Xu*, Intrinsic vacancy in 2D defective semiconductor In2S3 for artificial photonic nociceptor, Mater. Futures 2, 035301 (2023). 影响因子10, SCI一区
16.Wenjuan Ci, Huali Yang, Wuhong Xue*(共同通讯作者), Ruilong Yang, Baohua Lv, Peng Wang, Run-Wei Li and Xiao-Hong Xu*, Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2, Nano Res. 15, 7597-7603 (2022). 影响因子9, SCI一区
17.Zeting Zeng, Wei Zhao, Qitao Jiang, Yan Han, Rongkai Jiao, Zheng Zhang, Can Zhao, Wenjuan Ci, Huisheng Zhang, Wuhong Xue*(共同通讯作者), Xiaohong Xu*, A dual-confined strategy growing 2D nonlayered FeCr2Te4 with coexisting ferrimagnetic-antiferromagnetic state, Nano Res. 19, 94908675 (2026). 影响因子9, SCI一区
18.Zheng Zhang, Lei Shi, Bin Wang, Jingyuan Qu, Xiaoling Wang, Tao Wang, Qitao Jiang, Wuhong Xue*(共同通讯作者), Xiaohong Xu*, Epitaxial growth of full-vdW α-In2Se3/MoS2 heterostructures for all-in-one sensing and memory-computing artificial visual system, Chinese Chem. Lett. 109687 (2024). 影响因子9, SCI一区
19.Zheng Zhang, Yu Li, Yan Wen, Ziwen An, Siwei Jing, Jingyuan Qu, Wuhong Xue*, Xiaohong Xu*,Vision associative memory based on single ferroelectric semiconductor α-In2Se3, Nano Res. Accepted, 影响因子9, SCI一区
20.Baohua Lv, Wuhong Xue*(共同通讯作者), Zhi Yan, Ruilong Yang, Hao Wu, Peng Wang, Yuying Zhang, Jiani Hou, Wenguang Zhu and Xiaohong Xu*, Control of photocurrent and multi-state memory by polar order engineering in 2H-stacked α-In2Se3 ferroelectric, Sci. China Mater. 65, 1639-1645 (2022). 影响因子7, SCI一区
21.Wuhong Xue*(第一作者, 共同通讯作者), Caihong Gao, Zheng Zhang, Tingting Han, Nan Hou, Wenhui Yin, Lei Shi, Xiaoling Wang, Gang Liu, Xiaohong Xu*, Native drift and Mott nanochannel in layered V2O5 film for synaptic and nociceptive simulation, Sci. China Mater. 66, 764-771(2023). 影响因子7, SCI一区
22.Wuhong Xue(第一作者), Qitao Jiang, Fakun Wang, Ri He, Ruixue Pang, Huali Yang, Peng Wang, Ruilong Yang, Zhicheng Zhong, Tianyou Zhai*, Xiaohong Xu*, Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α‑Ga2Se3, Small 18, 2105599 (2021). 影响因子12, SCI一区
23.Baohua Lv, Zhi Yan, Wuhong Xue*(共同通讯作者), Ruilong Yang, Jiayi Li, Wenjuan Ci, Ruixue Pang, Peng Zhou, Gang Liu, Zhongyuan Liu, Wenguang Zhu, Xiaohong Xu*, Layer-Dependent Ferroelectricity in 2H-Stacked Few-Layer α-In2Se3, Mater. Horiz. 8, 1472-1480 (2021). 影响因子10, SCI一区
24.Baohua Lv, Ruilong Yang, Zheng Zhang, Ziwen An, Zeting Zeng, Yanli Song, Zhu Ma, Wuhong Xue*(共同通讯作者), Xiaohong Xu*, Multisensory integration neuromorphic device based on ferroelectric polar order change in atomic-thick α-In2Se3, Appl. Phys. Rev. 12, 021422 (2025) (亮点论文). 影响因子11, SCI二区
科研项目:
1.国家自然科学基金青年科学项目(B类)(原国家优秀青年科学基金项目)“二维磁性材料与器件”,2027-2030;
2.国家重点研发计划青年科学家项目子课题“自旋力矩调控及其非易失多功能可编程自旋逻辑器件研究”,2025-2029;
3.国家自然科学基金面上项目“二维CoCp2/ReSe2超晶格的制备与室温多铁性研究”,2027-2030;
4.国家自然科学基金面上项目“范德华异质结中电场驱动离子迁移对磁性的调控研究”,2024-2027;
5.国家自然科学基金重点专项项目子课题“二维磁性体系的超快自旋动力学及光磁调控的研究”,2023-2026;
6.国家自然科学基金青年项目“忆阻器中量子点接触结构的可控构建和精准调控”,2020-2022;
7.山西省自然科学基金优秀青年基金项目“电场驱动离子迁移对二维范德华材料的磁性调控研究”,2024-2026;
8.山西省高等学校青年学术带头人项目“二维亚稳相ɛ-Fe2O3的可控制备及高温铁性研究”,2024-2026;
9.山西师范大学青年拔尖人才项目“电场驱动离子迁移对二维范德华材料的磁性调控研究”,2024-2026。
授权专利:
1.薛武红,许小红,杨瑞龙,吕宝华,次文娟,庞瑞雪.一种晶体管器件及其应用和制备,中国发明专利,授权号:ZL 202010658629.0,授权日:2024-03-29。
2.李润伟,薛武红,刘钢.一种具有金属绝缘体转变功能的器件的制备方法,中国发明专利,授权号:ZL 201710557648.2,授权日:2019-09-13。
3.刘钢,薛武红,李润伟.一种量子电导特性可控的纳米点接触,中国发明专利,授权号:ZL 201711064145.8,授权日:2020-06-09。
4.刘钢,薛武红,叶晓羽,李润伟.一种电致电阻转变功能器件的处理方法及一种超大磁电阻器件,中国发明专利,授权号:ZL 201711099295.2,授权日:2020-10-27。
5.许小红,王兰芳,李小丽,薛武红,秦秀芳.一种低能耗、多功能的多层纳米线阻变存储器,中国发明专利,授权号:ZL 201710509414.0,授权日:2019-11-26。

